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| Mfr. No: | NXH007F120M3F2PTHG |
| Mfr.: | onsemi |
| Category: | MOSFET Modules |
| Description: | MOSFET Modules 7M 1200V 40A M3S SIC FULL BRIDGE MODULE |
| Lifecycle: | Active |
| Technology | Silicon Carbide (SiC) |
| Configuration | 4 N-Channel (Full Bridge) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 149A (Tc) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 120A, 18V |
| Vgs(th) (Max) @ Id | 4.4V @ 60mA |
| Gate Charge (Qg) (Max) @ Vgs | 407nC @ 18V |
| Input Capacitance (Ciss) (Max) @ Vds | 9090pF @ 800V |
| Power - Max | 353W (Tj) |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Supplier Device Package | 34-PIM (56.7x42.5) |
| Packaging | Tray |
| Standard Pack Qty | 20 |
| Category | MOSFET Modules |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 315 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
As a mosfet modules component, the NXH007F120M3F2PTHG is manufactured and supplied by onsemi. Its datasheet lists technology: Silicon Carbide (SiC), configuration: 4 N-Channel (Full Bridge), FET feature: -, drain to source voltage: 1200V (1.2kV), current, continuous drain (id) @ 25°C: 149A (Tc) and rds on (max) @ id, vgs: 10mOhm @ 120A, 18V. This part has a typical lead time of 315 Days from factory. Simplytronix carries NXH007F120M3F2PTHG in stock, backed by a genuine parts guarantee and quick dispatch.
