*For representation only.
NXH010P120MNF1PTNG
| Mfr. No: | NXH010P120MNF1PTNG |
| Mfr.: | onsemi |
| Category: | MOSFET Modules |
| Description: | MOSFET Modules PIM F1 SIC HALFBRIDGE 1200V 10MOHM(NI-PLATED + TIM) |
| Datasheet: | NXH010P120MNF1PTNG Datasheet (PDF) |
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Specifications
| Technology | Silicon Carbide (SiC) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 114A (Tc) |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 100A, 20V |
| Vgs(th) (Max) @ Id | 4.3V @ 40mA |
| Gate Charge (Qg) (Max) @ Vgs | 454nC @ 20V |
| Input Capacitance (Ciss) (Max) @ Vds | 4707pF @ 800V |
| Power - Max | 250W (Tj) |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Supplier Device Package | - |
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Product Attributes
| Packaging | Tray |
| Standard Pack Qty | 28 |
8,413
Units In Stock
📦 Tray
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFET Modules |
| RoHS | |
| Lifecycle | |
| Lead Time | 112 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| USHTS | 8542390070 |
| ECCN | EAR99 |
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Product Overview
As a mosfet modules component, the NXH010P120MNF1PTNG is manufactured and supplied by onsemi. Its datasheet lists technology: Silicon Carbide (SiC), configuration: 2 N-Channel (Dual), FET feature: -, drain to source voltage: 1200V (1.2kV), current, continuous drain (id) @ 25°C: 114A (Tc) and rds on (max) @ id, vgs: 14mOhm @ 100A, 20V. This part has a typical lead time of 112 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix carries NXH010P120MNF1PTNG in stock, backed by a genuine parts guarantee and quick dispatch.
