*For representation only.
NXH015F120M3F1P1TG
| Mfr. No: | NXH015F120M3F1P1TG |
| Mfr.: | onsemi |
| Category: | MOSFET Modules |
| Description: | MOSFET Modules 15 mohm SiC M3S MOSFET, 1200 V, new TIM, 4-PACK Full Bridge Topology,F1Package |
| Lifecycle: | Active |
⚙
Specifications
| Technology | Silicon Carbide (SiC) |
| Configuration | 4 N-Channel (Full Bridge) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 77A |
| Rds On (Max) @ Id, Vgs | 19mOhm @ 60A, 18V |
| Vgs(th) (Max) @ Id | 4.4V @ 30mA |
| Gate Charge (Qg) (Max) @ Vgs | 211nC @ 18V |
| Input Capacitance (Ciss) (Max) @ Vds | 4696pF @ 800V |
| Power - Max | 198W |
| Operating Temperature | -40°C ~ 175°C |
| Grade | - |
| Qualification | - |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Supplier Device Package | 22-PIM (33.8x42.5) |
📦
Product Attributes
| Packaging | Tray |
| Standard Pack Qty |
6,147
Units In Stock
📦 Tray
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | MOSFET Modules |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 217 Days (from factory) |
📄
Documentation
Datasheet not available
ℹ
Product Overview
onsemi manufactures the NXH015F120M3F1P1TG, a mosfet modules part used in electronic assemblies. It features technology: Silicon Carbide (SiC), configuration: 4 N-Channel (Full Bridge), FET feature: -, drain to source voltage: 1200V (1.2kV), current, continuous drain (id) @ 25°C: 77A and rds on (max) @ id, vgs: 19mOhm @ 60A, 18V. This part has a typical lead time of 217 Days from factory. You can source NXH015F120M3F1P1TG through Simplytronix, with fast shipping and verified authenticity.
