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NXH200T120H3Q2F2STNG

Mfr. No: NXH200T120H3Q2F2STNG
Mfr.: onsemi
Category: IGBT Modules
Description: IGBT Modules 80KW GEN-II Q2PACK-200A MODULE WITH TIM(NI-PLATED)
Datasheet: NXH200T120H3Q2F2STNG Datasheet (PDF)
⚙ Specifications
IGBT Type Trench Field Stop
Configuration Half Bridge
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 330 A
Power - Max 679 W
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 200A
Current - Collector Cutoff (Max) 500 µA
Input Capacitance (Cies) @ Vce 35.615 nF @ 25 V
Input Standard
NTC Thermistor No
Operating Temperature -40°C ~ 175°C (TJ)
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package 56-PIM/Q2PACK (93x47)
📦 Product Attributes
Packaging Tray
Standard Pack Qty 12
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
11,244
Units In Stock
📦 Tray
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🔑 Key Specifications
Category IGBT Modules
RoHS
Lifecycle
Lead Time 126 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
USHTS 8541290095
TARIC 8541290000
ECCN EAR99
ℹ Product Overview

NXH200T120H3Q2F2STNG is an igbt modules component manufactured by onsemi. It features IGBT type: Trench Field Stop, configuration: Half Bridge, voltage, collector emitter breakdown: 650 V, current, collector (ic): 330 A, power, max: 679 W and vce(on) (max) @ vge, ic: 2.3V @ 15V, 200A. This part has a typical lead time of 126 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix offers NXH200T120H3Q2F2STNG in stock, verified authentic and ready for same-day dispatch.

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