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UHB100SC12E1BC3N onsemi
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UHB100SC12E1BC3N

Mfr. No: UHB100SC12E1BC3N
Mfr.: onsemi
Category: Discrete Semiconductor Modules
Description: Discrete Semiconductor Modules 1200V/100ASICHALF-BRIDG
Lifecycle: Active
⚙ Specifications
Technology Silicon Carbide (SiC)
Configuration 2 P-Channel (Half Bridge)
FET Feature -
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Rds On (Max) @ Id, Vgs 12mOhm @ 70A, 12V
Vgs(th) (Max) @ Id 6V @ 40mA
Gate Charge (Qg) (Max) @ Vgs 170nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds 5859pF @ 800V
Power - Max 417W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package Module
📦 Product Attributes
Packaging Tray
Standard Pack Qty 24
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement NXH008P12M3F1PTG
3,228
Units In Stock
📦 Tray
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🔑 Key Specifications
Category Discrete Semiconductor Modules
RoHS RoHS Compliant
Lifecycle End of Life
Lead Time 266 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CNHTS 8504409100
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

The UHB100SC12E1BC3N, made by onsemi, belongs to the discrete semiconductor modules product category. Its datasheet lists technology: Silicon Carbide (SiC), configuration: 2 P-Channel (Half Bridge), FET feature: -, drain to source voltage: 1200V (1.2kV), current, continuous drain (id) @ 25°C: 100A (Tc) and rds on (max) @ id, vgs: 12mOhm @ 70A, 12V. This part has a typical lead time of 266 Days from factory. Simplytronix stocks UHB100SC12E1BC3N for same-day shipping with genuine parts guaranteed.

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