*For representation only.
PCDB20120G1_R2_00001
| Mfr. No: | PCDB20120G1_R2_00001 |
| Mfr.: | Panjit |
| Category: | SiC Schottky Diodes |
| Description: | SiC Schottky Diodes 1200V SiC Schottky Barrier Diode |
| Lifecycle: | Active |
⚙
Specifications
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Current - Average Rectified (Io) | 20A |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 20 A |
| Speed | Zero Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 180 µA @ 1200 V |
| Capacitance @ Vr, F | 1040pF @ 1V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Supplier Device Package | TO-263 |
| Operating Temperature - Junction | -55°C ~ 175°C |
📦
Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 800 |
9,381
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | SiC Schottky Diodes |
| RoHS | RoHS Compliant |
| Lifecycle | Not Recommended for New Designs |
| Lead Time | 126 Days (from factory) |
📄
Documentation
Datasheet not available
🌐
Compliance & Export
| Country / Standard | Code |
|---|---|
| USHTS | 8541100080 |
| TARIC | 8541100000 |
| ECCN | EAR99 |
ℹ
Product Overview
Panjit manufactures the PCDB20120G1_R2_00001, a sic schottky diodes part used in electronic assemblies. Notable characteristics of this part include technology: SiC (Silicon Carbide) Schottky, voltage, DC reverse (vr): 1200 V, current, average rectified: 20A, voltage, forward (vf) (max) @ if: 1.7 V @ 20 A, speed: Zero Recovery Time > 500mA (Io) and reverse recovery time: 0 ns. This part has a typical lead time of 126 Days from factory. You can source PCDB20120G1_R2_00001 through Simplytronix, with fast shipping and verified authenticity.
