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RBA200N15YAPF-6UA03#KB0 Renesas Electronics
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RBA200N15YAPF-6UA03#KB0

Mfr. No: RBA200N15YAPF-6UA03#KB0
Mfr.: Renesas Electronics
Category: MOSFETs
Description: MOSFETs Auto. MOS REXFET-1 150V 3.4mohm TOLT
Datasheet: RBA200N15YAPF-6UA03#KB0 Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V
Current - Continuous Drain (Id) @ 25°C 200A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 86 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6200 pF @ 75 V
FET Feature -
Power Dissipation (Max) 800W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package TOLT
Package / Case 16-PowerSOP Module
📦 Product Attributes
Packaging Reel
Standard Pack Qty 1300
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
9,320
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle New Product
Lead Time 84 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

RBA200N15YAPF-6UA03#KB0 is a mosfets component manufactured by Renesas Electronics. Key specifications include FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 150 V, current, continuous drain (id) @ 25°C: 200A (Tc), drive voltage: 10V and rds on (max) @ id, vgs: 3.4mOhm @ 100A, 10V. This part has a typical lead time of 84 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix offers RBA200N15YAPF-6UA03#KB0 in stock, verified authentic and ready for same-day dispatch.

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