*For representation only.
2SAR567F3TR
| Mfr. No: | 2SAR567F3TR |
| Mfr.: | ROHM Semiconductor |
| Category: | Bipolar Transistors - BJT |
| Description: | Bipolar Transistors - BJT 120V 2.5A DF2020 BJT PNP TRA |
| Lifecycle: | Active |
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Specifications
| Transistor Type | PNP |
| Current - Collector (Ic) (Max) | 2.5 A |
| Voltage - Collector Emitter Breakdown (Max) | 120 V |
| Vce Saturation (Max) @ Ib, Ic | 200mV @ 80mA, 800mA |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 100mA, 5V |
| Power - Max | 1 W |
| Frequency - Transition | 220MHz |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 3-UDFN Exposed Pad |
| Supplier Device Package | HUML2020L3 |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 3000 |
516
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | Bipolar Transistors - BJT |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 91 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| USHTS | 8541290055 |
| TARIC | 8541290000 |
| ECCN | EAR99 |
ℹ
Product Overview
ROHM Semiconductor's 2SAR567F3TR is a widely used transistors part in electronic designs. Notable characteristics of this part include transistor type: PNP, current, collector (ic): 2.5 A, voltage, collector emitter breakdown: 120 V, vce saturation (max) @ ib, ic: 200mV @ 80mA, 800mA, current, collector cutoff: 1µA (ICBO) and DC current gain (hfe) (min) @ ic, vce: 120 @ 100mA, 5V. This part has a typical lead time of 91 Days from factory. Simplytronix supplies 2SAR567F3TR with same-day shipping and guaranteed authenticity.
