*For representation only.
BSM180C12P3C202
| Mfr. No: | BSM180C12P3C202 |
| Mfr.: | ROHM Semiconductor |
| Category: | MOSFET Modules |
| Description: | MOSFET Modules 1200V, 180A, Chopper, Full SiC-Power Module with Trench MOSFET |
| Lifecycle: | Active |
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Specifications
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Rds On (Max) @ Id, Vgs | - |
| Vgs(th) (Max) @ Id | 5.6V @ 50mA |
| Vgs (Max) | +22V, -4V |
| Input Capacitance (Ciss) (Max) @ Vds | 9000 pF @ 10 V |
| FET Feature | - |
| Power Dissipation (Max) | 880W (Tc) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Chassis Mount |
| Supplier Device Package | Module |
| Package / Case | Module |
📦
Product Attributes
| Packaging | Bulk |
| Standard Pack Qty | 12 |
3,124
Units In Stock
📦 Bulk
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | MOSFET Modules |
| RoHS | RoHS Compliant By Exemption |
| Lifecycle | |
| Lead Time | 189 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| USHTS | 8541590080 |
| ECCN | EAR99 |
ℹ
Product Overview
As a mosfet modules component, the BSM180C12P3C202 is manufactured and supplied by ROHM Semiconductor. Notable characteristics of this part include FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 1200 V, current, continuous drain (id) @ 25°C: 180A (Tc), drive voltage: - and rds on (max) @ id, vgs: -. This part has a typical lead time of 189 Days from factory. Simplytronix carries BSM180C12P3C202 in stock, backed by a genuine parts guarantee and quick dispatch.
