*For representation only.
BSM400D12P2G003
| Mfr. No: | BSM400D12P2G003 |
| Mfr.: | ROHM Semiconductor |
| Category: | MOSFET Modules |
| Description: | MOSFET Modules SIC Pwr Module Half Bridge |
| Lifecycle: | Active |
⚙
Specifications
| Technology | Silicon Carbide (SiC) |
| Configuration | 2 N-Channel (Half Bridge) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 400A (Tc) |
| Rds On (Max) @ Id, Vgs | - |
| Vgs(th) (Max) @ Id | 4V @ 85mA |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Input Capacitance (Ciss) (Max) @ Vds | 38000pF @ 10V |
| Power - Max | 2450W (Tc) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Package / Case | Module |
| Supplier Device Package | Module |
📦
Product Attributes
| Packaging | Bulk |
| Standard Pack Qty | 4 |
12,607
Units In Stock
📦 Bulk
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | MOSFET Modules |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 189 Days (from factory) |
📄
Documentation
Datasheet not available
🌐
Compliance & Export
| Country / Standard | Code |
|---|---|
| USHTS | 8541590080 |
| ECCN | EAR99 |
ℹ
Product Overview
BSM400D12P2G003 is a mosfet modules component manufactured by ROHM Semiconductor. Its datasheet lists technology: Silicon Carbide (SiC), configuration: 2 N-Channel (Half Bridge), FET feature: -, drain to source voltage: 1200V (1.2kV), current, continuous drain (id) @ 25°C: 400A (Tc) and rds on (max) @ id, vgs: -. This part has a typical lead time of 189 Days from factory. Simplytronix offers BSM400D12P2G003 in stock, verified authentic and ready for same-day dispatch.
