*For representation only.
BST70B2P4K01-VC
| Mfr. No: | BST70B2P4K01-VC |
| Mfr.: | ROHM Semiconductor |
| Category: | MOSFET Modules |
| Description: | MOSFET Modules 1200V, 70A, Full-bridge, Automotive / Industrial Grade SiC Power Module |
| Lifecycle: | Active |
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Specifications
| Technology | Silicon Carbide (SiC) |
| Configuration | 4 N-Channel (Full Bridge) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 70A, 18V |
| Vgs(th) (Max) @ Id | 4.8V @ 22.2mA |
| Gate Charge (Qg) (Max) @ Vgs | 170nC @ 18V |
| Input Capacitance (Ciss) (Max) @ Vds | 4500pF @ 800V |
| Power - Max | 385W (Tc) |
| Operating Temperature | -40°C ~ 175°C |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Package / Case | 20-PowerDIP Module (1.508", 38.30mm) |
| Supplier Device Package | 20-HSDIP |
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Product Attributes
| Packaging | Bulk |
| Standard Pack Qty | 60 |
12,854
Units In Stock
📦 Bulk
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFET Modules |
| RoHS | |
| Lifecycle | New Product |
| Lead Time | 189 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| USHTS | 8541590080 |
| ECCN | EAR99 |
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Product Overview
BST70B2P4K01-VC is a mosfet modules part produced by ROHM Semiconductor for use across a range of applications. Its datasheet lists technology: Silicon Carbide (SiC), configuration: 4 N-Channel (Full Bridge), FET feature: -, drain to source voltage: 1200V (1.2kV), current, continuous drain (id) @ 25°C: 70A (Tc) and rds on (max) @ id, vgs: 25mOhm @ 70A, 18V. This part has a typical lead time of 189 Days from factory. Order BST70B2P4K01-VC from Simplytronix for authenticated stock and same-day order processing.
