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DTA123JMHZGT2L ROHM Semiconductor
*For representation only.

DTA123JMHZGT2L

Mfr. No: DTA123JMHZGT2L
Mfr.: ROHM Semiconductor
Category: Digital Transistors
Description: Digital Transistors PNP, SOT-723, R1?R2 Leak Absorption Type Digital Transistor (Bias Resistor Built-in Transistor) for automotive, suitable for inverter and interface, driver. This is a high-reliability product of automotive grade qualified to AEC-Q101.
Datasheet: DTA123JMHZGT2L Datasheet (PDF)
⚙ Specifications
Transistor Type PNP
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
Power - Max 150 mW
Frequency - Transition 250MHz
Operating Temperature 150°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Package / Case SOT-723
Supplier Device Package VMT3
📦 Product Attributes
Packaging Reel
Standard Pack Qty 8000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
14,302
Units In Stock
📦 Reel
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🔑 Key Specifications
Category Digital Transistors
RoHS
Lifecycle New Product
Lead Time 91 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CAHTS 8541210000
USHTS 8541210075
JPHTS 854121000
KRHTS 8541219000
TARIC 8541210000
MXHTS 8541210100
ECCN EAR99
ℹ Product Overview

The DTA123JMHZGT2L, made by ROHM Semiconductor, belongs to the digital transistors product category. Among its key specs are transistor type: PNP, current, collector (ic): 100 mA, voltage, collector emitter breakdown: 50 V, vce saturation (max) @ ib, ic: 300mV @ 250µA, 5mA, current, collector cutoff: 500nA and DC current gain (hfe) (min) @ ic, vce: 80 @ 10mA, 5V. This part has a typical lead time of 91 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks DTA123JMHZGT2L for same-day shipping with genuine parts guaranteed.

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