| Mfr. No: | HP8KB6TB1 |
| Mfr.: | ROHM Semiconductor |
| Category: | MOSFETs |
| Description: | MOSFETs 40V 24A, Dual Nch+Nch, HSOP8, Power MOSFET: HP8KB6 is a low on-resistance MOSFET ideal for switching applications. |
| Datasheet: | HP8KB6TB1 Datasheet (PDF) |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 10.5A (Ta), 24A (Tc) |
| Rds On (Max) @ Id, Vgs | 15.7mOhm @ 10.5A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 10.6nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 530pF @ 20V |
| Power - Max | 3W (Ta), 21W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Supplier Device Package | 8-HSOP |
| Packaging | Reel |
| Standard Pack Qty | 2500 |
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 126 Days (from factory) |
| Country / Standard | Code |
|---|---|
| USHTS | 8541290065 |
| TARIC | 8541290000 |
| ECCN | EAR99 |
ROHM Semiconductor manufactures the HP8KB6TB1, a mosfets part used in electronic assemblies. This component is defined by technology: MOSFET (Metal Oxide), configuration: 2 N-Channel (Dual), FET feature: -, drain to source voltage: 40V, current, continuous drain (id) @ 25°C: 10.5A (Ta), 24A (Tc) and rds on (max) @ id, vgs: 15.7mOhm @ 10.5A, 10V. This part has a typical lead time of 126 Days from factory and ships with a full manufacturer datasheet available for download. You can source HP8KB6TB1 through Simplytronix, with fast shipping and verified authenticity.