| Mfr. No: | HP8KE6TB1 |
| Mfr.: | ROHM Semiconductor |
| Category: | MOSFETs |
| Description: | MOSFETs 100V 17A, Dual Nch+Nch, HSOP8, Power MOSFET: HP8KE6 is a low on-resistance MOSFET ideal for switching applications. |
| Datasheet: | HP8KE6TB1 Datasheet (PDF) |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 6A (Ta), 17A (Tc) |
| Rds On (Max) @ Id, Vgs | 54mOhm @ 6A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 6.7nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 305pF @ 50V |
| Power - Max | 3W (Ta), 21W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Supplier Device Package | 8-HSOP |
| Packaging | Reel |
| Standard Pack Qty | 2500 |
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 126 Days (from factory) |
| Country / Standard | Code |
|---|---|
| USHTS | 8541290065 |
| TARIC | 8541290000 |
| ECCN | EAR99 |
Manufactured by ROHM Semiconductor, the HP8KE6TB1 is classified under mosfets. Key specifications include technology: MOSFET (Metal Oxide), configuration: 2 N-Channel (Dual), FET feature: -, drain to source voltage: 100V, current, continuous drain (id) @ 25°C: 6A (Ta), 17A (Tc) and rds on (max) @ id, vgs: 54mOhm @ 6A, 10V. This part has a typical lead time of 126 Days from factory and ships with a full manufacturer datasheet available for download. Get HP8KE6TB1 from Simplytronix, shipped same day with a genuine parts guarantee.