| Mfr. No: | HT8KE5TB1 |
| Mfr.: | ROHM Semiconductor |
| Category: | MOSFETs |
| Description: | MOSFETs 100V 7A, Dual Nch+Nch, HSMT8, Power MOSFET: HT8KE5 is a low on-resistance MOSFET ideal for switching applications. |
| Datasheet: | HT8KE5TB1 Datasheet (PDF) |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Ta), 7A (Tc) |
| Rds On (Max) @ Id, Vgs | 193mOhm @ 2.5A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 2.9nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 90pF @ 50V |
| Power - Max | 2W (Ta), 13W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerVDFN |
| Supplier Device Package | 8-HSMT (3.2x3) |
| Packaging | Reel |
| Standard Pack Qty | 3000 |
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 126 Days (from factory) |
| Country / Standard | Code |
|---|---|
| USHTS | 8541290065 |
| TARIC | 8541290000 |
| ECCN | EAR99 |
ROHM Semiconductor's HT8KE5TB1 is a widely used mosfets part in electronic designs. Technical specifications for this part include technology: MOSFET (Metal Oxide), configuration: 2 N-Channel (Dual), FET feature: -, drain to source voltage: 100V, current, continuous drain (id) @ 25°C: 2.5A (Ta), 7A (Tc) and rds on (max) @ id, vgs: 193mOhm @ 2.5A, 10V. This part has a typical lead time of 126 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix supplies HT8KE5TB1 with same-day shipping and guaranteed authenticity.