*For representation only.
HT8KE6HTB1
| Mfr. No: | HT8KE6HTB1 |
| Mfr.: | ROHM Semiconductor |
| Category: | MOSFETs |
| Description: | MOSFETs HSMT8 100V 12.5A N CHAN |
| Datasheet: | HT8KE6HTB1 Datasheet (PDF) |
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Specifications
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Ta), 12.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 4.5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 6.3nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 320pF @ 50V |
| Power - Max | 2W (Ta), 14W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerVDFN |
| Supplier Device Package | 8-HSMT (3.2x3) |
📦
Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 3000 |
14,403
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 126 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
ℹ
Product Overview
ROHM Semiconductor manufactures the HT8KE6HTB1, a mosfets part used in electronic assemblies. Notable characteristics of this part include technology: MOSFET (Metal Oxide), configuration: 2 N-Channel (Dual), FET feature: -, drain to source voltage: 100V, current, continuous drain (id) @ 25°C: 4.5A (Ta), 12.5A (Tc) and rds on (max) @ id, vgs: 60mOhm @ 4.5A, 10V. This part has a typical lead time of 126 Days from factory and ships with a full manufacturer datasheet available for download. You can source HT8KE6HTB1 through Simplytronix, with fast shipping and verified authenticity.
