| Mfr. No: | QH8KE6TCR |
| Mfr.: | ROHM Semiconductor |
| Category: | MOSFETs |
| Description: | MOSFETs 100V 4A, Dual Nch+Nch, TSMT8, Power MOSFET |
| Lifecycle: | Active |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 4A (Ta) |
| Rds On (Max) @ Id, Vgs | 56mOhm @ 4A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 6.7nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 305pF @ 50V |
| Power - Max | 1.1W (Ta) |
| Operating Temperature | 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Package / Case | 8-SMD, Flat Leads |
| Supplier Device Package | TSMT8 |
| Packaging | Reel |
| Standard Pack Qty | 3000 |
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 112 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
The QH8KE6TCR from ROHM Semiconductor falls under the mosfets category. Technical specifications for this part include technology: MOSFET (Metal Oxide), configuration: 2 N-Channel (Dual), FET feature: -, drain to source voltage: 100V, current, continuous drain (id) @ 25°C: 4A (Ta) and rds on (max) @ id, vgs: 56mOhm @ 4A, 10V. This part has a typical lead time of 112 Days from factory. QH8KE6TCR is available through Simplytronix, sourced and verified for authenticity.