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R6009KNXC7G ROHM Semiconductor
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R6009KNXC7G

Mfr. No: R6009KNXC7G
Mfr.: ROHM Semiconductor
Category: MOSFETs
Description: MOSFETs TO220 600V 9A N-CH MOSFET
Datasheet: R6009KNXC7G Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 535mOhm @ 2.8A, 10V
Vgs(th) (Max) @ Id 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 16.5 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 540 pF @ 25 V
FET Feature -
Power Dissipation (Max) 48W (Tc)
Operating Temperature 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-220FM
Package / Case TO-220-3 Full Pack
📦 Product Attributes
Packaging Tube
Standard Pack Qty 1000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
3,446
Units In Stock
📦 Tube
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 126 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
USHTS 8541290065
TARIC 8541290000
ECCN EAR99
ℹ Product Overview

The R6009KNXC7G from ROHM Semiconductor falls under the mosfets category. Its datasheet lists FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 600 V, current, continuous drain (id) @ 25°C: 9A (Ta), drive voltage: 10V and rds on (max) @ id, vgs: 535mOhm @ 2.8A, 10V. This part has a typical lead time of 126 Days from factory and ships with a full manufacturer datasheet available for download. R6009KNXC7G is available through Simplytronix, sourced and verified for authenticity.

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