| Mfr. No: | R8002ANX |
| Mfr.: | ROHM Semiconductor |
| Category: | MOSFETs |
| Description: | MOSFETs 10V Drive Nch MOSFET |
| Lifecycle: | Not For New Designs |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 800 V |
| Current - Continuous Drain (Id) @ 25°C | 2A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 4.3Ohm @ 1A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 12.7 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 210 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 35W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220FM |
| Package / Case | TO-220-3 Full Pack |
| Packaging | Bulk |
| Standard Pack Qty | 500 |
| Alternate Packaging | |
| Suggested Replacement | R8002KNXC7G |
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | Not Recommended for New Designs |
| Lead Time | 161 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 8541290100 |
| KRHTS | 8541299000 |
| TARIC | 8541290000 |
| MXHTS | 85412999 |
| ECCN | EAR99 |
ROHM Semiconductor manufactures the R8002ANX, a mosfets part used in electronic assemblies. It features FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 800 V, current, continuous drain (id) @ 25°C: 2A (Tc), drive voltage: 10V and rds on (max) @ id, vgs: 4.3Ohm @ 1A, 10V. This part has a typical lead time of 161 Days from factory. You can source R8002ANX through Simplytronix, with fast shipping and verified authenticity.