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R8019KNXC7G ROHM Semiconductor
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R8019KNXC7G

Mfr. No: R8019KNXC7G
Mfr.: ROHM Semiconductor
Category: MOSFETs
Description: MOSFETs 800V 19A, TO-220FM, High-speed switching Power MOSFET: The R8xxxKNx series are high-speed switching products, Super Junction MOSFETs, that place an emphasis on high efficiency. This series products achieve higher efficiency via high-speed switching.
Lifecycle: Active
Datasheet: R8019KNXC7G Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 265mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 7mA
Gate Charge (Qg) (Max) @ Vgs 65 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2100 pF @ 100 V
FET Feature -
Power Dissipation (Max) 83W (Tc)
Operating Temperature 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-220FM
Package / Case TO-220-3 Full Pack
📦 Product Attributes
Packaging Tube
Standard Pack Qty 1000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
12,918
Units In Stock
📦 Tube
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 126 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

R8019KNXC7G is a mosfets part produced by ROHM Semiconductor for use across a range of applications. Key specifications include FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 800 V, current, continuous drain (id) @ 25°C: 19A (Tc), drive voltage: 10V and rds on (max) @ id, vgs: 265mOhm @ 9.5A, 10V. This part has a typical lead time of 126 Days from factory and ships with a full manufacturer datasheet available for download. Order R8019KNXC7G from Simplytronix for authenticated stock and same-day order processing.

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