| Mfr. No: | RD3U080AAFRATL |
| Mfr.: | ROHM Semiconductor |
| Category: | MOSFETs |
| Description: | MOSFETs TO252 250V 8A N-CH MOSFET |
| Datasheet: | RD3U080AAFRATL Datasheet (PDF) |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 250 V |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 300mOhm @ 4A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 1440 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 85W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252 |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Packaging | Reel |
| Standard Pack Qty | 2500 |
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 112 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
The RD3U080AAFRATL from ROHM Semiconductor falls under the mosfets category. It features FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 250 V, current, continuous drain (id) @ 25°C: 8A (Tc), drive voltage: 10V and rds on (max) @ id, vgs: 300mOhm @ 4A, 10V. This part has a typical lead time of 112 Days from factory and ships with a full manufacturer datasheet available for download. RD3U080AAFRATL is available through Simplytronix, sourced and verified for authenticity.