| Mfr. No: | RGW80TS65EHRC11 |
| Mfr.: | ROHM Semiconductor |
| Category: | IGBTs |
| Description: | IGBTs Transistor, IGBT, 650V 40A, FRD Built-in, TO-247N, Field Stop Trench IGBT |
| Datasheet: | RGW80TS65EHRC11 Datasheet (PDF) |
| IGBT Type | Trench Field Stop |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector (Ic) (Max) | 80 A |
| Current - Collector Pulsed (Icm) | 160 A |
| Vce(on) (Max) @ Vge, Ic | 1.9V @ 15V, 40A |
| Power - Max | 214 W |
| Input Type | Standard |
| Gate Charge | 110 nC |
| Td (on/off) @ 25°C | 43ns/148ns |
| Test Condition | 400V, 20A, 10Ohm, 15V |
| Reverse Recovery Time (trr) | 86 ns |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247N |
| Packaging | Tube |
| Standard Pack Qty | 450 |
| Category | IGBTs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 154 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
The RGW80TS65EHRC11 from ROHM Semiconductor falls under the igbts category. Among its key specs are IGBT type: Trench Field Stop, voltage, collector emitter breakdown: 650 V, current, collector (ic): 80 A, current, collector pulsed: 160 A, vce(on) (max) @ vge, ic: 1.9V @ 15V, 40A and power, max: 214 W. This part has a typical lead time of 154 Days from factory and ships with a full manufacturer datasheet available for download. RGW80TS65EHRC11 is available through Simplytronix, sourced and verified for authenticity.