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RQ6C050BCTCR ROHM Semiconductor
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RQ6C050BCTCR

Mfr. No: RQ6C050BCTCR
Mfr.: ROHM Semiconductor
Category: MOSFETs
Description: MOSFETs Pch -20V -5A Si MOSFET
Datasheet: RQ6C050BCTCR Datasheet (PDF)
⚙ Specifications
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V
Rds On (Max) @ Id, Vgs 36mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 10.4 nC @ 4.5 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 740 pF @ 10 V
FET Feature -
Power Dissipation (Max) 1.25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package TSMT6 (SC-95)
Package / Case SOT-23-6 Thin, TSOT-23-6
📦 Product Attributes
Packaging Reel
Standard Pack Qty 3000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
12,855
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 112 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
ℹ Product Overview

Manufactured by ROHM Semiconductor, the RQ6C050BCTCR is classified under mosfets. This part is specified with FET type: P-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 20 V, current, continuous drain (id) @ 25°C: 5A (Tc), drive voltage: 4.5V and rds on (max) @ id, vgs: 36mOhm @ 5A, 4.5V. This part has a typical lead time of 112 Days from factory and ships with a full manufacturer datasheet available for download. Get RQ6C050BCTCR from Simplytronix, shipped same day with a genuine parts guarantee.

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