| Mfr. No: | RQ7G080BGTCR |
| Mfr.: | ROHM Semiconductor |
| Category: | MOSFETs |
| Description: | MOSFETs TSMT8 N-CH 40V 8A |
| Datasheet: | RQ7G080BGTCR Datasheet (PDF) |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V |
| Current - Continuous Drain (Id) @ 25°C | 8A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 16.5mOhm @ 8A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 10.6 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 530 pF @ 20 V |
| FET Feature | - |
| Power Dissipation (Max) | 1.1W (Ta) |
| Operating Temperature | 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | TSMT8 |
| Package / Case | 8-SMD, Flat Leads |
| Packaging | Reel |
| Standard Pack Qty | 3000 |
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 112 Days (from factory) |
| Country / Standard | Code |
|---|---|
| USHTS | 8541290065 |
| TARIC | 8541290000 |
| ECCN | EAR99 |
RQ7G080BGTCR is a mosfets part produced by ROHM Semiconductor for use across a range of applications. This component is defined by FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 40 V, current, continuous drain (id) @ 25°C: 8A (Ta), drive voltage: 4.5V, 10V and rds on (max) @ id, vgs: 16.5mOhm @ 8A, 10V. This part has a typical lead time of 112 Days from factory and ships with a full manufacturer datasheet available for download. Order RQ7G080BGTCR from Simplytronix for authenticated stock and same-day order processing.