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RS3G160ATTB1 ROHM Semiconductor
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RS3G160ATTB1

Mfr. No: RS3G160ATTB1
Mfr.: ROHM Semiconductor
Category: MOSFETs
Description: MOSFETs Transistor, MOSFET Pch, -40V(Vdss), -16.0A(Id), (4.5V, 6.0V Drive)
Datasheet: RS3G160ATTB1 Datasheet (PDF)
⚙ Specifications
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 16A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 6.2mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 120 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6250 pF @ 20 V
FET Feature -
Power Dissipation (Max) 1.4W (Ta)
Operating Temperature 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package 8-SOP
Package / Case 8-SOIC (0.154", 3.90mm Width)
📦 Product Attributes
Packaging Reel
Standard Pack Qty 2500
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
3,485
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 126 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
USHTS 8541290065
TARIC 8541290000
ECCN EAR99
ℹ Product Overview

Manufactured by ROHM Semiconductor, the RS3G160ATTB1 is classified under mosfets. It features FET type: P-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 40 V, current, continuous drain (id) @ 25°C: 16A (Ta), drive voltage: 4.5V, 10V and rds on (max) @ id, vgs: 6.2mOhm @ 16A, 10V. This part has a typical lead time of 126 Days from factory and ships with a full manufacturer datasheet available for download. Get RS3G160ATTB1 from Simplytronix, shipped same day with a genuine parts guarantee.

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