*For representation only.
RS6E122BGTB1
| Mfr. No: | RS6E122BGTB1 |
| Mfr.: | ROHM Semiconductor |
| Category: | MOSFETs |
| Description: | MOSFETs HSOP8 N-CH 30V 155A |
| Lifecycle: | Active |
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Specifications
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 155A (Ta), 120A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 2.16mOhm @ 90A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 3310 pF @ 15 V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta), 89W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-HSOP |
| Package / Case | 8-PowerTDFN |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 2500 |
4,043
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFETs |
| RoHS | |
| Lifecycle | New Product |
| Lead Time | 126 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
ℹ
Product Overview
RS6E122BGTB1 is a mosfets part produced by ROHM Semiconductor for use across a range of applications. Technical specifications for this part include FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 30 V, current, continuous drain (id) @ 25°C: 155A (Ta), 120A (Tc), drive voltage: 4.5V, 10V and rds on (max) @ id, vgs: 2.16mOhm @ 90A, 10V. This part has a typical lead time of 126 Days from factory. Order RS6E122BGTB1 from Simplytronix for authenticated stock and same-day order processing.
