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RS6G120CGTB1 ROHM Semiconductor
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RS6G120CGTB1

Mfr. No: RS6G120CGTB1
Mfr.: ROHM Semiconductor
Category: MOSFETs
Description: MOSFETs Discrete Semiconductors, MOSFETs, Nch 40V 300A, HSOP8, Power MOSFET
Datasheet: RS6G120CGTB1 Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 300A (Ta), 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 0.9mOhm @ 90A, 10V
Vgs(th) (Max) @ Id 2.5V @ 30mA
Gate Charge (Qg) (Max) @ Vgs 87 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5450 pF @ 20 V
FET Feature -
Power Dissipation (Max) 3.6W (Ta), 166W (Tc)
Operating Temperature 175°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package 8-HSOP
Package / Case 8-PowerTDFN
📦 Product Attributes
Packaging Reel
Standard Pack Qty 2500
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
5,885
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS
Lifecycle New Product
Lead Time 112 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
USHTS 8541290095
TARIC 8541290000
ECCN EAR99
ℹ Product Overview

ROHM Semiconductor's RS6G120CGTB1 is a widely used mosfets part in electronic designs. This part is specified with FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 40 V, current, continuous drain (id) @ 25°C: 300A (Ta), 120A (Tc), drive voltage: 4.5V, 10V and rds on (max) @ id, vgs: 0.9mOhm @ 90A, 10V. This part has a typical lead time of 112 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix supplies RS6G120CGTB1 with same-day shipping and guaranteed authenticity.

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