*For representation only.
SCS315AHGC9
| Mfr. No: | SCS315AHGC9 |
| Mfr.: | ROHM Semiconductor |
| Category: | SiC Schottky Diodes |
| Description: | SiC Schottky Diodes 650V;15A;93W SiC SBD TO-220ACP |
| Lifecycle: | Obsolete |
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Specifications
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) | 15A |
| Speed | Zero Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 75 µA @ 650 V |
| Capacitance @ Vr, F | 750pF @ 1V, 1MHz |
| Mounting Type | Through Hole |
| Package / Case | TO-220-2 |
| Supplier Device Package | TO-220ACP |
| Operating Temperature - Junction | 175°C (Max) |
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Product Attributes
| Packaging | Tube |
| Standard Pack Qty | 1000 |
12,062
Units In Stock
📦 Tube
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | SiC Schottky Diodes |
| RoHS | RoHS Compliant |
| Lifecycle | Not Recommended for New Designs |
| Lead Time | 0 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541100000 |
| USHTS | 8541100080 |
| ECCN | EAR99 |
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Product Overview
Manufactured by ROHM Semiconductor, the SCS315AHGC9 is classified under sic schottky diodes. Technical specifications for this part include technology: SiC (Silicon Carbide) Schottky, voltage, DC reverse (vr): 650 V, current, average rectified: 15A, speed: Zero Recovery Time > 500mA (Io), reverse recovery time: 0 ns and current, reverse leakage @ vr: 75 µA @ 650 V. This part has a typical lead time of 0 Days from factory. Get SCS315AHGC9 from Simplytronix, shipped same day with a genuine parts guarantee.
