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SCT2080KEGC11 ROHM Semiconductor
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SCT2080KEGC11

Mfr. No: SCT2080KEGC11
Mfr.: ROHM Semiconductor
Category: SiC MOSFETs
Description: SiC MOSFETs RECT 1.2KV 40A RDL SIC SKY
Datasheet: SCT2080KEGC11 Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V
Rds On (Max) @ Id, Vgs 117mOhm @ 10A, 18V
Vgs(th) (Max) @ Id 4V @ 4.4mA
Gate Charge (Qg) (Max) @ Vgs 106 nC @ 18 V
Vgs (Max) +22V, -6V
Input Capacitance (Ciss) (Max) @ Vds 2080 pF @ 800 V
FET Feature -
Power Dissipation (Max) 262W (Tc)
Operating Temperature 175°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-247N
Package / Case TO-247-3
📦 Product Attributes
Packaging Tube
Standard Pack Qty 450
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
13,326
Units In Stock
📦 Tube
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🔑 Key Specifications
Category SiC MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 161 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

Manufactured by ROHM Semiconductor, the SCT2080KEGC11 is classified under sic mosfets. Technical specifications for this part include FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 1200 V, current, continuous drain (id) @ 25°C: 40A (Tc), drive voltage: 18V and rds on (max) @ id, vgs: 117mOhm @ 10A, 18V. This part has a typical lead time of 161 Days from factory and ships with a full manufacturer datasheet available for download. Get SCT2080KEGC11 from Simplytronix, shipped same day with a genuine parts guarantee.

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