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SCT2750NYTB ROHM Semiconductor
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SCT2750NYTB

Mfr. No: SCT2750NYTB
Mfr.: ROHM Semiconductor
Category: SiC MOSFETs
Description: SiC MOSFETs N-Ch 1700V 6A 57W SiC Silicon Carbide
Datasheet: SCT2750NYTB Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1700 V
Current - Continuous Drain (Id) @ 25°C 5.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V
Rds On (Max) @ Id, Vgs 975mOhm @ 1.7A, 18V
Vgs(th) (Max) @ Id 4V @ 630µA
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 18 V
Vgs (Max) +22V, -6V
Input Capacitance (Ciss) (Max) @ Vds 275 pF @ 800 V
FET Feature -
Power Dissipation (Max) 57W (Tc)
Operating Temperature 175°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package TO-268
Package / Case TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
📦 Product Attributes
Packaging Reel
Standard Pack Qty 800
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement SCT2750NWCTL1
3,664
Units In Stock
📦 Reel
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🔑 Key Specifications
Category SiC MOSFETs
RoHS RoHS Compliant By Exemption
Lifecycle End of Life
Lead Time 0 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
KRHTS 8541299000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

The SCT2750NYTB, made by ROHM Semiconductor, belongs to the sic mosfets product category. Notable characteristics of this part include FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 1700 V, current, continuous drain (id) @ 25°C: 5.9A (Tc), drive voltage: 18V and rds on (max) @ id, vgs: 975mOhm @ 1.7A, 18V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks SCT2750NYTB for same-day shipping with genuine parts guaranteed.

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