*For representation only.
SCT2H12NWBTL1
| Mfr. No: | SCT2H12NWBTL1 |
| Mfr.: | ROHM Semiconductor |
| Category: | SiC MOSFETs |
| Description: | SiC MOSFETs TO263 1.7KV N-CH 3.9A |
| Lifecycle: | Active |
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Specifications
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1700 V |
| Current - Continuous Drain (Id) @ 25°C | 3.9A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 1.1A, 18V |
| Vgs(th) (Max) @ Id | 4V @ 410µA |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 18 V |
| Vgs (Max) | +22V, -6V |
| Input Capacitance (Ciss) (Max) @ Vds | 197 pF @ 800 V |
| FET Feature | - |
| Power Dissipation (Max) | 39W (Tc) |
| Operating Temperature | 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-263CA-7LSHYAD |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 800 |
12,428
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | SiC MOSFETs |
| RoHS | |
| Lifecycle | New Product |
| Lead Time | 161 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
ℹ
Product Overview
SCT2H12NWBTL1 is a sic mosfets part produced by ROHM Semiconductor for use across a range of applications. It features FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 1700 V, current, continuous drain (id) @ 25°C: 3.9A (Tc), drive voltage: 18V and rds on (max) @ id, vgs: 1.5Ohm @ 1.1A, 18V. This part has a typical lead time of 161 Days from factory. Order SCT2H12NWBTL1 from Simplytronix for authenticated stock and same-day order processing.
