| Mfr. No: | SCT2H12NZGC11 |
| Mfr.: | ROHM Semiconductor |
| Category: | SiC MOSFETs |
| Description: | SiC MOSFETs 1700V 3.7A N-MOSFET Silicon Carbide SiC |
| Lifecycle: | Active |
| Datasheet: | SCT2H12NZGC11 Datasheet (PDF) |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1700 V |
| Current - Continuous Drain (Id) @ 25°C | 3.7A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 1.1A, 18V |
| Vgs(th) (Max) @ Id | 4V @ 900µA |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 18 V |
| Vgs (Max) | +22V, -6V |
| Input Capacitance (Ciss) (Max) @ Vds | 184 pF @ 800 V |
| FET Feature | - |
| Power Dissipation (Max) | 35W (Tc) |
| Operating Temperature | 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-3PFM |
| Package / Case | TO-3PFM, SC-93-3 |
| Packaging | Tube |
| Standard Pack Qty | 450 |
| Category | SiC MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 161 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| KRHTS | 8541299000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
ROHM Semiconductor's SCT2H12NZGC11 is a widely used sic mosfets part in electronic designs. Key specifications include FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 1700 V, current, continuous drain (id) @ 25°C: 3.7A (Tc), drive voltage: 18V and rds on (max) @ id, vgs: 1.5Ohm @ 1.1A, 18V. This part has a typical lead time of 161 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix supplies SCT2H12NZGC11 with same-day shipping and guaranteed authenticity.