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SCT3030KLHRC11 ROHM Semiconductor
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SCT3030KLHRC11

Mfr. No: SCT3030KLHRC11
Mfr.: ROHM Semiconductor
Category: SiC MOSFETs
Description: SiC MOSFETs 1200V 72A 339W SIC 30mOhm TO-247N
Lifecycle: Active
⚙ Specifications
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 72A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V
Rds On (Max) @ Id, Vgs 39mOhm @ 27A, 18V
Vgs(th) (Max) @ Id 5.6V @ 13.3mA
Gate Charge (Qg) (Max) @ Vgs 131 nC @ 18 V
Vgs (Max) +22V, -4V
Input Capacitance (Ciss) (Max) @ Vds 2222 pF @ 800 V
FET Feature -
Power Dissipation (Max) 339W
Operating Temperature 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Through Hole
Supplier Device Package TO-247N
Package / Case TO-247-3
📦 Product Attributes
Packaging Tube
Standard Pack Qty 450
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
7,879
Units In Stock
📦 Tube
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🔑 Key Specifications
Category SiC MOSFETs
RoHS RoHS Compliant By Exemption
Lifecycle
Lead Time 189 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
USHTS 8541290065
ECCN EAR99
ℹ Product Overview

SCT3030KLHRC11 is a sic mosfets part produced by ROHM Semiconductor for use across a range of applications. Technical specifications for this part include FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 1200 V, current, continuous drain (id) @ 25°C: 72A (Tc), drive voltage: 18V and rds on (max) @ id, vgs: 39mOhm @ 27A, 18V. This part has a typical lead time of 189 Days from factory. Order SCT3030KLHRC11 from Simplytronix for authenticated stock and same-day order processing.

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