*For representation only.
SCT3080ALGC11
| Mfr. No: | SCT3080ALGC11 |
| Mfr.: | ROHM Semiconductor |
| Category: | SiC MOSFETs |
| Description: | SiC MOSFETs N-Ch 650V 30A Silicon Carbide SiC |
| Lifecycle: | Active |
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Specifications
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Rds On (Max) @ Id, Vgs | 104mOhm @ 10A, 18V |
| Vgs(th) (Max) @ Id | 5.6V @ 5mA |
| Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 18 V |
| Vgs (Max) | +22V, -4V |
| Input Capacitance (Ciss) (Max) @ Vds | 571 pF @ 500 V |
| FET Feature | - |
| Power Dissipation (Max) | 134W (Tc) |
| Operating Temperature | 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247N |
| Package / Case | TO-247-3 |
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Product Attributes
| Packaging | Tube |
| Standard Pack Qty | 450 |
13,827
Units In Stock
📦 Tube
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | SiC MOSFETs |
| RoHS | RoHS Compliant By Exemption |
| Lifecycle | |
| Lead Time | 189 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 8541290100 |
| KRHTS | 8541299000 |
| TARIC | 8541290000 |
| MXHTS | 85412999 |
| ECCN | EAR99 |
ℹ
Product Overview
As a sic mosfets component, the SCT3080ALGC11 is manufactured and supplied by ROHM Semiconductor. Key specifications include FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 650 V, current, continuous drain (id) @ 25°C: 30A (Tc), drive voltage: 18V and rds on (max) @ id, vgs: 104mOhm @ 10A, 18V. This part has a typical lead time of 189 Days from factory. Simplytronix carries SCT3080ALGC11 in stock, backed by a genuine parts guarantee and quick dispatch.
