| Mfr. No: | SCT3105KRC14 |
| Mfr.: | ROHM Semiconductor |
| Category: | SiC MOSFETs |
| Description: | SiC MOSFETs 1200V Nch SiC Trench MOSFET in 4pin Package - SCT3105KR is a trench gate structure SiC MOSFET ideal for server power supplies, solar inverters, and electric vehicle charging stations. A 4pin package that separates the power source terminal and driver |
| Lifecycle: | Obsolete |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 24A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Rds On (Max) @ Id, Vgs | 137mOhm @ 7.6A, 18V |
| Vgs(th) (Max) @ Id | 5.6V @ 3.81mA |
| Gate Charge (Qg) (Max) @ Vgs | 51 nC @ 18 V |
| Vgs (Max) | +22V, -4V |
| Input Capacitance (Ciss) (Max) @ Vds | 574 pF @ 800 V |
| FET Feature | - |
| Power Dissipation (Max) | 134W |
| Operating Temperature | 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-4L |
| Package / Case | TO-247-4 |
| Packaging | Tube |
| Standard Pack Qty | 240 |
| Alternate Packaging | |
| Suggested Replacement | SCT3105KRC15 |
| Category | SiC MOSFETs |
| RoHS | RoHS Compliant By Exemption |
| Lifecycle | Not Recommended for New Designs |
| Lead Time | 0 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
SCT3105KRC14 is a sic mosfets component manufactured by ROHM Semiconductor. Technical specifications for this part include FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 1200 V, current, continuous drain (id) @ 25°C: 24A (Tc), drive voltage: 18V and rds on (max) @ id, vgs: 137mOhm @ 7.6A, 18V. This part has a typical lead time of 0 Days from factory. Simplytronix offers SCT3105KRC14 in stock, verified authentic and ready for same-day dispatch.