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SCT3160KW7HRTL ROHM Semiconductor
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SCT3160KW7HRTL

Mfr. No: SCT3160KW7HRTL
Mfr.: ROHM Semiconductor
Category: SiC MOSFETs
Description: SiC MOSFETs Transistor SiC MOSFET 1200V 160m 3rd Gen TO-263-7L
Lifecycle: Active
⚙ Specifications
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V
Rds On (Max) @ Id, Vgs 208mOhm @ 5A, 18V
Vgs(th) (Max) @ Id 5.6V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs 42 nC @ 18 V
Vgs (Max) +22V, -4V
Input Capacitance (Ciss) (Max) @ Vds 398 pF @ 800 V
FET Feature -
Power Dissipation (Max) -
Operating Temperature 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package TO-263-7L
Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
📦 Product Attributes
Packaging Reel
Standard Pack Qty 1000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
3,907
Units In Stock
📦 Reel
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🔑 Key Specifications
Category SiC MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 189 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

ROHM Semiconductor manufactures the SCT3160KW7HRTL, a sic mosfets part used in electronic assemblies. This part is specified with FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 1200 V, current, continuous drain (id) @ 25°C: 17A (Tc), drive voltage: 18V and rds on (max) @ id, vgs: 208mOhm @ 5A, 18V. This part has a typical lead time of 189 Days from factory. You can source SCT3160KW7HRTL through Simplytronix, with fast shipping and verified authenticity.

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