*For representation only.
SCT4027KTWHRTCR
| Mfr. No: | SCT4027KTWHRTCR |
| Mfr.: | ROHM Semiconductor |
| Category: | SiC MOSFETs |
| Description: | SiC MOSFETs 1200V, 54A, 9-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive |
| Lifecycle: | Active |
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Specifications
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 54A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Rds On (Max) @ Id, Vgs | 36mOhm @ 28A, 18V |
| Vgs(th) (Max) @ Id | 4.8V @ 14.8mA |
| Gate Charge (Qg) (Max) @ Vgs | 118 nC @ 18 V |
| Vgs (Max) | +21V, -4V |
| Input Capacitance (Ciss) (Max) @ Vds | 3008 pF @ 800 V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Operating Temperature | 175°C |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount, Wettable Flank |
| Supplier Device Package | 3-USON (1.1x1) |
| Package / Case | 3-PowerUDFN |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 600 |
3,128
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | SiC MOSFETs |
| RoHS | |
| Lifecycle | New Product |
| Lead Time | 189 Days (from factory) |
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Documentation
Datasheet not available
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Product Overview
ROHM Semiconductor manufactures the SCT4027KTWHRTCR, a sic mosfets part used in electronic assemblies. Technical specifications for this part include FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 1200 V, current, continuous drain (id) @ 25°C: 54A (Tc), drive voltage: 18V and rds on (max) @ id, vgs: 36mOhm @ 28A, 18V. This part has a typical lead time of 189 Days from factory. You can source SCT4027KTWHRTCR through Simplytronix, with fast shipping and verified authenticity.
