*For representation only.
SCT4062KTWHRTCR
| Mfr. No: | SCT4062KTWHRTCR |
| Mfr.: | ROHM Semiconductor |
| Category: | SiC MOSFETs |
| Description: | SiC MOSFETs 1200V, 25A, 9-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive |
| Datasheet: | SCT4062KTWHRTCR Datasheet (PDF) |
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Specifications
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Rds On (Max) @ Id, Vgs | 81mOhm @ 12A, 18V |
| Vgs(th) (Max) @ Id | 4.8V @ 6.45mA |
| Gate Charge (Qg) (Max) @ Vgs | 64 nC @ 18 V |
| Vgs (Max) | +21V, -4V |
| Input Capacitance (Ciss) (Max) @ Vds | 1498 pF @ 800 V |
| FET Feature | - |
| Power Dissipation (Max) | 106W |
| Operating Temperature | 175°C |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount, Wettable Flank |
| Supplier Device Package | 3-USON (1.1x1) |
| Package / Case | 3-PowerUDFN |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 600 |
13,449
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | SiC MOSFETs |
| RoHS | |
| Lifecycle | New Product |
| Lead Time | 189 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Product Overview
The SCT4062KTWHRTCR, made by ROHM Semiconductor, belongs to the sic mosfets product category. Its datasheet lists FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 1200 V, current, continuous drain (id) @ 25°C: 25A (Tc), drive voltage: 18V and rds on (max) @ id, vgs: 81mOhm @ 12A, 18V. This part has a typical lead time of 189 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks SCT4062KTWHRTCR for same-day shipping with genuine parts guaranteed.
