| Mfr. No: | SH8K25GZ0TB1 |
| Mfr.: | ROHM Semiconductor |
| Category: | MOSFETs |
| Description: | MOSFETs 40V Nch+Nch Power MOSFET |
| Lifecycle: | Not For New Designs |
| Datasheet: | SH8K25GZ0TB1 Datasheet (PDF) |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 5.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 85mOhm @ 5.2A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 1.7nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 100pF @ 10V |
| Power - Max | 1.4W (Ta) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SOP |
| Packaging | Reel |
| Standard Pack Qty | 2500 |
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | Not Recommended for New Designs |
| Lead Time | 126 Days (from factory) |
| Country / Standard | Code |
|---|---|
| USHTS | 8541290065 |
| TARIC | 8541290000 |
| ECCN | EAR99 |
ROHM Semiconductor's SH8K25GZ0TB1 is a widely used mosfets part in electronic designs. Its datasheet lists technology: MOSFET (Metal Oxide), configuration: 2 N-Channel (Dual), FET feature: -, drain to source voltage: 40V, current, continuous drain (id) @ 25°C: 5.2A (Ta) and rds on (max) @ id, vgs: 85mOhm @ 5.2A, 10V. This part has a typical lead time of 126 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix supplies SH8K25GZ0TB1 with same-day shipping and guaranteed authenticity.