*For representation only.
BSM120D12P2C005
| Mfr. No: | BSM120D12P2C005 |
| Mfr.: | ROHM Semiconductor |
| Category: | MOSFET Modules |
| Description: | MOSFET Modules Mod: 1200V 120A (w/ Diode) |
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Specifications
| Technology | Silicon Carbide (SiC) |
| Configuration | 2 N-Channel (Half Bridge) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | - |
| Vgs(th) (Max) @ Id | 2.7V @ 22mA |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Input Capacitance (Ciss) (Max) @ Vds | 14000pF @ 10V |
| Power - Max | 780W |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Package / Case | Module |
| Supplier Device Package | Module |
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Product Attributes
| Packaging | Bulk |
| Standard Pack Qty | 12 |
13,941
Units In Stock
📦 Bulk
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFET Modules |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 189 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8504409100 |
| CAHTS | 8542310000 |
| USHTS | 8542310075 |
| KRHTS | 8542311000 |
| TARIC | 8542319000 |
| MXHTS | 8542310302 |
| ECCN | EAR99 |
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Product Overview
BSM120D12P2C005 is a mosfet modules part produced by ROHM Semiconductor for use across a range of applications. Notable characteristics of this part include technology: Silicon Carbide (SiC), configuration: 2 N-Channel (Half Bridge), FET feature: -, drain to source voltage: 1200V (1.2kV), current, continuous drain (id) @ 25°C: 120A (Tc) and rds on (max) @ id, vgs: -. This part has a typical lead time of 189 Days from factory. Order BSM120D12P2C005 from Simplytronix for authenticated stock and same-day order processing.
