*For representation only.
BSM180C12P2E202
| Mfr. No: | BSM180C12P2E202 |
| Mfr.: | ROHM Semiconductor |
| Category: | MOSFET Modules |
| Description: | MOSFET Modules 1200V Vdss; 204A ID SiC Mod; SICSTD02 |
| Lifecycle: | Active |
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Specifications
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 204A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Rds On (Max) @ Id, Vgs | - |
| Vgs(th) (Max) @ Id | 4V @ 35.2mA |
| Vgs (Max) | +22V, -6V |
| Input Capacitance (Ciss) (Max) @ Vds | 20000 pF @ 10 V |
| FET Feature | - |
| Power Dissipation (Max) | 1360W (Tc) |
| Operating Temperature | 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Chassis Mount |
| Supplier Device Package | Module |
| Package / Case | Module |
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Product Attributes
| Packaging | Tray |
| Standard Pack Qty | 4 |
6,765
Units In Stock
📦 Tray
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
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Key Specifications
| Category | MOSFET Modules |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 189 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8504409190 |
| USHTS | 8541290065 |
| ECCN | EAR99 |
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Product Overview
Manufactured by ROHM Semiconductor, the BSM180C12P2E202 is classified under mosfet modules. Technical specifications for this part include FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 1200 V, current, continuous drain (id) @ 25°C: 204A (Tc), drive voltage: - and rds on (max) @ id, vgs: -. This part has a typical lead time of 189 Days from factory. Get BSM180C12P2E202 from Simplytronix, shipped same day with a genuine parts guarantee.
