| Mfr. No: | BSM400D12P3G002 |
| Mfr.: | ROHM Semiconductor |
| Category: | MOSFET Modules |
| Description: | MOSFET Modules 358A 1200V HALF BRIDGE SIC |
| Lifecycle: | Obsolete |
| Technology | Silicon Carbide (SiC) |
| Configuration | 2 N-Channel (Half Bridge) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 400A (Tc) |
| Rds On (Max) @ Id, Vgs | - |
| Vgs(th) (Max) @ Id | 5.6V @ 109.2mA |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Input Capacitance (Ciss) (Max) @ Vds | 17000pF @ 10V |
| Power - Max | 1570W (Tc) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Supplier Device Package | Module |
| Packaging | Bulk |
| Standard Pack Qty | 4 |
| Alternate Packaging | |
| Suggested Replacement | BSM450D12P4G102 |
| Category | MOSFET Modules |
| RoHS | RoHS Compliant |
| Lifecycle | Not Recommended for New Designs |
| Lead Time | 189 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CAHTS | 8541590000 |
| USHTS | 8541590080 |
| JPHTS | 854159000 |
| TARIC | 8541590000 |
| MXHTS | 8541500100 |
| ECCN | EAR99 |
Manufactured by ROHM Semiconductor, the BSM400D12P3G002 is classified under mosfet modules. Its datasheet lists technology: Silicon Carbide (SiC), configuration: 2 N-Channel (Half Bridge), FET feature: -, drain to source voltage: 1200V (1.2kV), current, continuous drain (id) @ 25°C: 400A (Tc) and rds on (max) @ id, vgs: -. This part has a typical lead time of 189 Days from factory. Get BSM400D12P3G002 from Simplytronix, shipped same day with a genuine parts guarantee.