| Mfr. No: | GNP2025TD-ZTR |
| Mfr.: | ROHM Semiconductor |
| Category: | GaN FETs |
| Description: | GaN FETs EcoGaN, 650V 59.8A TOLL-8N, E-mode Gallium-Nitride(GaN) HEMT |
| Lifecycle: | Discontinued |
| FET Type | N-Channel |
| Technology | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 59.8A (TC) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 6V |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 12A, 6V |
| Vgs(th) (Max) @ Id | 2.5V @ 46mA |
| Gate Charge (Qg) (Max) @ Vgs | 13.2 nC @ 6 V |
| Vgs (Max) | +6.5V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 413 pF @ 400 V |
| FET Feature | - |
| Power Dissipation (Max) | 291W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | TOLL-8N |
| Package / Case | 8-PowerSFN |
| Packaging | Reel |
| Standard Pack Qty | 2000 |
| Category | GaN FETs |
| RoHS | |
| Lifecycle | New Product |
| Lead Time | 168 Days (from factory) |
| Country / Standard | Code |
|---|---|
| ECCN | EAR99 |
The GNP2025TD-ZTR from ROHM Semiconductor falls under the gan fets category. This part is specified with FET type: N-Channel, technology: GaNFET (Gallium Nitride), drain to source voltage: 650 V, current, continuous drain (id) @ 25°C: 59.8A (TC), drive voltage: 5V, 6V and rds on (max) @ id, vgs: 35mOhm @ 12A, 6V. This part has a typical lead time of 168 Days from factory. GNP2025TD-ZTR is available through Simplytronix, sourced and verified for authenticity.