*For representation only.
HP8JB5TB1
| Mfr. No: | HP8JB5TB1 |
| Mfr.: | ROHM Semiconductor |
| Category: | MOSFETs |
| Description: | MOSFETs Discrete Semiconductors, MOSFETs, -40V 18A, Dual Pch+Pch, HSOP8, Power MOSFET |
| Datasheet: | HP8JB5TB1 Datasheet (PDF) |
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Specifications
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 P-Channel (Dual) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 7A (Ta), 18A (Tc) |
| Rds On (Max) @ Id, Vgs | 44mOhm @ 7A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 17.2nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 920pF @ 20V |
| Power - Max | 3W (Ta), 21W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Supplier Device Package | 8-HSOP |
📦
Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 2500 |
9,289
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | MOSFETs |
| RoHS | |
| Lifecycle | New Product |
| Lead Time | 126 Days (from factory) |
📄
Documentation
⬇ Download Datasheet
🌐
Compliance & Export
| Country / Standard | Code |
|---|---|
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| ECCN | EAR99 |
ℹ
Product Overview
The HP8JB5TB1 from ROHM Semiconductor falls under the mosfets category. Key specifications include technology: MOSFET (Metal Oxide), configuration: 2 P-Channel (Dual), FET feature: -, drain to source voltage: 40V, current, continuous drain (id) @ 25°C: 7A (Ta), 18A (Tc) and rds on (max) @ id, vgs: 44mOhm @ 7A, 10V. This part has a typical lead time of 126 Days from factory and ships with a full manufacturer datasheet available for download. HP8JB5TB1 is available through Simplytronix, sourced and verified for authenticity.
