*For representation only.
HS8K1TB
| Mfr. No: | HS8K1TB |
| Mfr.: | ROHM Semiconductor |
| Category: | MOSFETs |
| Description: | MOSFETs 30V Nch+Nch Power MOSFET |
| Datasheet: | HS8K1TB Datasheet (PDF) |
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Specifications
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta), 11A (Ta) |
| Rds On (Max) @ Id, Vgs | 14.6mOhm @ 10A, 10V, 11.8mOhm @ 11A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 6nC @ 10V, 7.4nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 348pF @ 15V, 429pF @ 15V |
| Power - Max | 2W (Ta) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-UDFN Exposed Pad |
| Supplier Device Package | HSML3030L10 |
📦
Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 3000 |
6,722
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant By Exemption |
| Lifecycle | |
| Lead Time | 112 Days (from factory) |
📄
Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| USHTS | 8541290065 |
| TARIC | 8541290000 |
| ECCN | EAR99 |
ℹ
Product Overview
HS8K1TB is a mosfets part produced by ROHM Semiconductor for use across a range of applications. Key specifications include technology: MOSFET (Metal Oxide), configuration: 2 N-Channel (Dual), FET feature: -, drain to source voltage: 30V, current, continuous drain (id) @ 25°C: 10A (Ta), 11A (Ta) and rds on (max) @ id, vgs: 14.6mOhm @ 10A, 10V, 11.8mOhm @ 11A, 10V. This part has a typical lead time of 112 Days from factory and ships with a full manufacturer datasheet available for download. Order HS8K1TB from Simplytronix for authenticated stock and same-day order processing.
