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R6009RND3TL1 ROHM Semiconductor
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R6009RND3TL1

Mfr. No: R6009RND3TL1
Mfr.: ROHM Semiconductor
Category: MOSFETs
Description: MOSFETs TO252 650V 27A N-CH MOSFET
Datasheet: R6009RND3TL1 Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V
Rds On (Max) @ Id, Vgs 665mOhm @ 4.5A, 15V
Vgs(th) (Max) @ Id 7V @ 5.5mA
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 15 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 640 pF @ 100 V
FET Feature -
Power Dissipation (Max) 125W (Tc)
Operating Temperature 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package TO-252
Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
📦 Product Attributes
Packaging Reel
Standard Pack Qty 2500
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
13,137
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 126 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

ROHM Semiconductor manufactures the R6009RND3TL1, a mosfets part used in electronic assemblies. It features FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 600 V, current, continuous drain (id) @ 25°C: 9A (Tc), drive voltage: 15V and rds on (max) @ id, vgs: 665mOhm @ 4.5A, 15V. This part has a typical lead time of 126 Days from factory and ships with a full manufacturer datasheet available for download. You can source R6009RND3TL1 through Simplytronix, with fast shipping and verified authenticity.

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