*For representation only.
R6511ENXC7G
| Mfr. No: | R6511ENXC7G |
| Mfr.: | ROHM Semiconductor |
| Category: | MOSFETs |
| Description: | MOSFETs TO220 650V 11A N-CH MOSFET |
| Lifecycle: | Active |
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Specifications
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 400mOhm @ 3.8A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 320µA |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 670 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 53W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220FM |
| Package / Case | TO-220-3 Full Pack |
📦
Product Attributes
| Packaging | Tube |
| Standard Pack Qty | 1000 |
6,400
Units In Stock
📦 Tube
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 126 Days (from factory) |
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Documentation
Datasheet not available
🌐
Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
ℹ
Product Overview
The R6511ENXC7G from ROHM Semiconductor falls under the mosfets category. Key specifications include FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 650 V, current, continuous drain (id) @ 25°C: 11A (Ta), drive voltage: 10V and rds on (max) @ id, vgs: 400mOhm @ 3.8A, 10V. This part has a typical lead time of 126 Days from factory. R6511ENXC7G is available through Simplytronix, sourced and verified for authenticity.
