| Mfr. No: | RGT8NS65DGC9 |
| Mfr.: | ROHM Semiconductor |
| Category: | IGBTs |
| Description: | IGBTs 5s Short-Circuit Tolerance, 650V 4A, FRD Built-in, TO-262, Field Stop Trench IGBT |
| Datasheet: | RGT8NS65DGC9 Datasheet (PDF) |
| IGBT Type | Trench Field Stop |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector (Ic) (Max) | 8 A |
| Current - Collector Pulsed (Icm) | 12 A |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 4A |
| Power - Max | 65 W |
| Switching Energy | - |
| Input Type | Standard |
| Gate Charge | 13.5 nC |
| Td (on/off) @ 25°C | 17ns/69ns |
| Test Condition | 400V, 4A, 50Ohm, 15V |
| Reverse Recovery Time (trr) | 40 ns |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Supplier Device Package | TO-262 |
| Packaging | Tube |
| Standard Pack Qty | 1000 |
| Category | IGBTs |
| RoHS | RoHS Compliant By Exemption |
| Lifecycle | Not Recommended for New Designs |
| Lead Time | 154 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| USHTS | 8541290065 |
| TARIC | 8541290000 |
| ECCN | EAR99 |
RGT8NS65DGC9 is a igbts part produced by ROHM Semiconductor for use across a range of applications. Notable characteristics of this part include IGBT type: Trench Field Stop, voltage, collector emitter breakdown: 650 V, current, collector (ic): 8 A, current, collector pulsed: 12 A, vce(on) (max) @ vge, ic: 2.1V @ 15V, 4A and power, max: 65 W. This part has a typical lead time of 154 Days from factory and ships with a full manufacturer datasheet available for download. Order RGT8NS65DGC9 from Simplytronix for authenticated stock and same-day order processing.