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RQ6G050ATTCR ROHM Semiconductor
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RQ6G050ATTCR

Mfr. No: RQ6G050ATTCR
Mfr.: ROHM Semiconductor
Category: MOSFETs
Description: MOSFETs Transistor, MOSFET Pch, -40V(Vdss), -5.0A(Id), (4.5V, 6.0V Drive)
Datasheet: RQ6G050ATTCR Datasheet (PDF)
⚙ Specifications
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 40mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1100 pF @ 20 V
FET Feature -
Power Dissipation (Max) 950mW (Ta)
Operating Temperature 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package TSMT6 (SC-95)
Package / Case SOT-23-6 Thin, TSOT-23-6
📦 Product Attributes
Packaging Reel
Standard Pack Qty 3000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
5,326
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 112 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

ROHM Semiconductor manufactures the RQ6G050ATTCR, a mosfets part used in electronic assemblies. Key specifications include FET type: P-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 40 V, current, continuous drain (id) @ 25°C: 5A (Ta), drive voltage: 4.5V, 10V and rds on (max) @ id, vgs: 40mOhm @ 5A, 10V. This part has a typical lead time of 112 Days from factory and ships with a full manufacturer datasheet available for download. You can source RQ6G050ATTCR through Simplytronix, with fast shipping and verified authenticity.

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