*For representation only.
RV4C020ZPHZGTCR1
| Mfr. No: | RV4C020ZPHZGTCR1 |
| Mfr.: | ROHM Semiconductor |
| Category: | MOSFETs |
| Description: | MOSFETs AECQ |
| Datasheet: | RV4C020ZPHZGTCR1 Datasheet (PDF) |
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Specifications
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain (Id) @ 25°C | 2A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Rds On (Max) @ Id, Vgs | 260mOhm @ 2A, 4.5V |
| Vgs(th) (Max) @ Id | 1.3V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 2 nC @ 4.5 V |
| Vgs (Max) | ±8V |
| Input Capacitance (Ciss) (Max) @ Vds | 80 pF @ 10 V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta) |
| Operating Temperature | 150°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount, Wettable Flank |
| Supplier Device Package | DFN1616-6W |
| Package / Case | 6-PowerWFDFN |
📦
Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 3000 |
8,047
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 119 Days (from factory) |
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Documentation
⬇ Download Datasheet
🌐
Compliance & Export
| Country / Standard | Code |
|---|---|
| USHTS | 8541290065 |
| TARIC | 8541290000 |
| ECCN | EAR99 |
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Product Overview
ROHM Semiconductor's RV4C020ZPHZGTCR1 is a widely used mosfets part in electronic designs. Among its key specs are FET type: P-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 20 V, current, continuous drain (id) @ 25°C: 2A (Ta), drive voltage: 1.5V, 4.5V and rds on (max) @ id, vgs: 260mOhm @ 2A, 4.5V. This part has a typical lead time of 119 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix supplies RV4C020ZPHZGTCR1 with same-day shipping and guaranteed authenticity.
